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NSDEMP11XV6T1, NSDEMP11XV6T5
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR
= 70 V
?
0.1
Adc
Forward Voltage
VF
IF
= 100 mA
?
1.2
Vdc
Reverse Breakdown Voltage
VR
IR
= 100
A
0
?
Vdc
Diode Capacitance
CD
VR
= 6.0 V, f = 1.0 MHz
?
3.5
pF
Reverse Recovery Time
trr
(Note 3)
IF
= 5.0 mA, V
R
= 6.0 V, R
L
= 100
, Irr
= 0.1 I
R
?
4.0
ns
3. trr
Test Circuit for NSDEMP11XV6T1 in Figure 4.
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.1
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.75
0.750
VR, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
TA
= 150
°C
TA
= 125
°C
TA
= 85
°C
TA
= 55
°C
TA
= 25
°C
I
R
, REVERSE CURRENT (
μ
A)
TA
= 85
°C
TA
= ?
°C
TA
= 25
°C
A
RL
tr
tp
t
10%
90%
VR
tp
= 2
s
tr
= 0.35 ns
IF
trr
t
Irr
= 0.1 I
R
IF
= 5.0 mA
VR
= 6 V
RL
= 100
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1
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